Integrating high-k metal gates: gate-first or gate

由 L Wu 著作 · 2013 — The chapter first explains the details of devices fabrication process and then describes the analysis technique used in this project, including ...

Electrode and Dielectric When the gate is pulsed, current flows between the source and drain. Intel's High-K/Metal Gate technology enabled elements on a chip to ...

Intel made a significant breakthrough in the 45nm process by using a high-k (Hi-k) material called hafnium to replace the transistor's silicon dioxide gate ...

由 J Robertson 著作 · 2015 · 被引用 734 次 — We review that progress in this article, with an emphasis on the key developments in the high-K/metal gate stack process. We also summarise recent results ...

由 J Robertson 著作 · 被引用 734 次 — The gate first process follows the standard process flow, but with a metal gate replacing the poly-Si gate. ... high temperatures, the gate last process was ...

High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another ...

由 TY Hoffmann 著作 · 被引用 33 次 — Similar to Intel's 45nm process, this approach is based on a high-k first scheme though, so unless significant progress is being made to improve the thermal ...

由 E Erben 著作 · 2018 · 被引用 8 次 — The metal gate for NMOS transistors requires a work function close to the conduction band of Si (∼4.1 eV) and the PMOS transistor needs a metal gate with a ...